Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions

G. G. Fischer, G. Sasso. Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions. Microelectronics Reliability, 55(3-4):498-507, 2015. [doi]

Authors

G. G. Fischer

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G. Sasso

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