Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions

G. G. Fischer, G. Sasso. Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions. Microelectronics Reliability, 55(3-4):498-507, 2015. [doi]

Abstract

Abstract is missing.