Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

Ygor Fonseca, Rafael Nóbrega, Ulysses Duarte, Thiago R. Raddo, Iyad Dayoub, Anderson L. Sanches, Murilo Bellezoni Loiola. Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems. In 12th International Symposium on Communication Systems, Networks and Digital Signal Processing, CSNDSP 2020, Porto, Portugal, July 20-22, 2020. pages 1-5, IEEE, 2020. [doi]

Abstract

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