Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3

S. Forster, T. Lequeu, R. Jérisian. Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3. Microelectronics Reliability, 43(1):89-98, 2003. [doi]

Authors

S. Forster

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T. Lequeu

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R. Jérisian

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