Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3

S. Forster, T. Lequeu, R. Jérisian. Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3. Microelectronics Reliability, 43(1):89-98, 2003. [doi]

Abstract

Abstract is missing.