Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-5, IEEE, 2023. [doi]
@inproceedings{FregolentMSBMZM23,
title = {Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques},
author = {Manuel Fregolent and Alberto Marcuzzi and Carlo De Santi and Eldad Bahat-Treidel and Gaudenzio Meneghesso and Enrico Zanoni and Matteo Meneghini},
year = {2023},
doi = {10.1109/IRPS48203.2023.10117719},
url = {https://doi.org/10.1109/IRPS48203.2023.10117719},
researchr = {https://researchr.org/publication/FregolentMSBMZM23},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023},
publisher = {IEEE},
isbn = {978-1-6654-5672-2},
}