Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology - researchr publication authors

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Enjin Fu, Valencia Joyner Koomson, Pengfei Wu, Shengling Deng, Z. Rena Huang. Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology. In 55th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2012, Boise, ID, USA, August 5-8, 2012. pages 37-40, IEEE, 2012. [doi]

This author has not been identified. Look up 'Enjin Fu' in GoogleThis author has not been identified. Look up 'Valencia Joyner Koomson' in GoogleThis author has not been identified. Look up 'Pengfei Wu' in GoogleThis author has not been identified. Look up 'Shengling Deng' in GoogleThis author has not been identified. Look up 'Z. Rena Huang' in Google

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