Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology

Enjin Fu, Valencia Joyner Koomson, Pengfei Wu, Shengling Deng, Z. Rena Huang. Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology. In 55th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2012, Boise, ID, USA, August 5-8, 2012. pages 37-40, IEEE, 2012. [doi]

@inproceedings{FuKWDH12,
  title = {Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology},
  author = {Enjin Fu and Valencia Joyner Koomson and Pengfei Wu and Shengling Deng and Z. Rena Huang},
  year = {2012},
  doi = {10.1109/MWSCAS.2012.6291951},
  url = {https://doi.org/10.1109/MWSCAS.2012.6291951},
  researchr = {https://researchr.org/publication/FuKWDH12},
  cites = {0},
  citedby = {0},
  pages = {37-40},
  booktitle = {55th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2012, Boise, ID, USA, August 5-8, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-2526-4},
}