Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology - researchr publication authors

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Philippe Galy, R. Lethiecq, Maryline Bawedin. Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology. In 2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018. pages 157-160, IEEE, 2018. [doi]

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