A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications

Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta. A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectronics Journal, 38(8-9):848-854, 2007. [doi]

@article{GangwaniPHGG07,
  title = {A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications},
  author = {Parvesh Gangwani and Sujata Pandey and Subhasis Haldar and Mridula Gupta and R. S. Gupta},
  year = {2007},
  doi = {10.1016/j.mejo.2007.07.117},
  url = {http://dx.doi.org/10.1016/j.mejo.2007.07.117},
  tags = {C++},
  researchr = {https://researchr.org/publication/GangwaniPHGG07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {38},
  number = {8-9},
  pages = {848-854},
}