The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability

Frank Gao, Ravi Chanana, Tom Nicholls. The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability. Microelectronics Reliability, 42(7):1003-1010, 2002. [doi]

Abstract

Abstract is missing.