Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films - researchr publication authors

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David Z. Gao, Jack Strand, A.-M. El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher. Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5, IEEE, 2018. [doi]

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