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Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers

R. García, Magali Estrada, Antonio Cerdeira. Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. Microelectronics Reliability, 43(8):1281-1287, 2003. [doi]

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R. García

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Magali Estrada

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Antonio Cerdeira

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