Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers

R. GarcĂ­a, Magali Estrada, Antonio Cerdeira. Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. Microelectronics Reliability, 43(8):1281-1287, 2003. [doi]

Abstract

Abstract is missing.