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Ambipolar field-effect transistor based on alpha, omega-dihexylquaterthiophene and alpha, omega-diperfluoroquaterthiophene vertical heterojunction

Gianluca Generali, Raffaella Capelli, Stefano Toffanin, Antonio Facchetti, Michele Muccini. Ambipolar field-effect transistor based on alpha, omega-dihexylquaterthiophene and alpha, omega-diperfluoroquaterthiophene vertical heterojunction. Microelectronics Reliability, 50(9-11):1861-1865, 2010. [doi]

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