A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

Mahdiar Hosein Ghadiry, Mahdieh Nadi Senjani, M. T. Ahmadi, Asrulnizam Bin Abd Manaf. A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors. Microelectronics Reliability, 51(12):2143-2146, 2011. [doi]

Abstract

Abstract is missing.