A simple gate drive for SiC MOSFET with switching transient improvement

Hamidreza Ghorbani, Vicent Sala, Alejandro Paredes Camacho, Jose Luis Romeral. A simple gate drive for SiC MOSFET with switching transient improvement. In 2017 IEEE Industry Applications Society Annual Meeting, Cincinnati, OH, USA, October 1-5, 2017. pages 1-6, IEEE, 2017. [doi]

Abstract

Abstract is missing.