Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction

Sayantan Ghosh, Sushovan Dhara, Abin Varghese, Kartikey Thakar, Saurabh Lodha. Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 163-164, IEEE, 2019. [doi]

@inproceedings{GhoshDVTL19,
  title = {Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction},
  author = {Sayantan Ghosh and Sushovan Dhara and Abin Varghese and Kartikey Thakar and Saurabh Lodha},
  year = {2019},
  doi = {10.1109/DRC46940.2019.9046419},
  url = {https://doi.org/10.1109/DRC46940.2019.9046419},
  researchr = {https://researchr.org/publication/GhoshDVTL19},
  cites = {0},
  citedby = {0},
  pages = {163-164},
  booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-2112-3},
}