Bastien Giraud, Amara Amara. Read Stability and Write Ability Tradeoff for 6T SRAM Cells in Double-Gate CMOS. In 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008, Hong Kong, January 23-25, 2008. pages 201-204, IEEE Computer Society, 2008. [doi]
@inproceedings{GiraudA08,
title = {Read Stability and Write Ability Tradeoff for 6T SRAM Cells in Double-Gate CMOS},
author = {Bastien Giraud and Amara Amara},
year = {2008},
doi = {10.1109/DELTA.2008.98},
url = {http://doi.ieeecomputersociety.org/10.1109/DELTA.2008.98},
researchr = {https://researchr.org/publication/GiraudA08},
cites = {0},
citedby = {0},
pages = {201-204},
booktitle = {4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008, Hong Kong, January 23-25, 2008},
publisher = {IEEE Computer Society},
}