A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI - researchr publication

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Robert Giterman, Alexander Fish, Andreas Burg, Adam Teman. A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI. IEEE Trans. on Circuits and Systems, 65-I(4):1245-1256, 2018. [doi]

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