An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications - researchr publication authors

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Robert Giterman, Alexander Fish, Narkis Geuli, Elad Mentovich, Andreas Burg, Adam Teman. An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications. In 43rd IEEE European Solid State Circuits Conference, ESSCIRC 2017, Leuven, Belgium, September 11-14, 2017. pages 308-311, IEEE, 2017. [doi]

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