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Area efficient diode and on transistor inter-changeable power gating scheme with trim options for SRAM design in nano-complementary metal oxide semiconductor technology

A. Goel, R. K. Sharma, A. Gupta. Area efficient diode and on transistor inter-changeable power gating scheme with trim options for SRAM design in nano-complementary metal oxide semiconductor technology. IET Circuits, Devices & Systems, 8(2):100-106, 2014. [doi]

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