Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State - researchr publication authors

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Haibo Gong, Rubab Ume, Vadim Tokranov, Michael Yakimov, Devendra Sadana, Kevin Brew, Guy Cohen, Sandra Schujman, Karsten Beckmann, Nathaniel C. Cady, Serge Oktyabrsky. Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State. In Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. pages 1-2, IEEE, 2021. [doi]

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