Table of Contents

• Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN EncapsulationAgata Piacentini, Daniel Schneider, Martin Otto 0003, Bárbara Canto, Zhenyu Wang, Aleksandra Radenovic, Andras Kis, Max C. Lemme, Daniel Neumaier. 1-2 [doi]
• Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/LinerXinkang Chen, Chun-Li Lo, Mark C. Johnson, Zhihong Chen, Sumeet Kumar Gupta. 1-2 [doi]
• Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave ApplicationsBoce Lin, Gihun Choe, Jae Hur, Asif Islam Khan, Shimeng Yu, Hua Wang. 1-2 [doi]
• 720 Million Quality Factor Integrated All-Waveguide Photonic ResonatorKaikai Liu, Naijun Jin, Haotian Cheng, Matthew W. Puckett, Ryan O. Behunin, Karl D. Nelson, Peter T. Rakich, Daniel J. Blumenthal. 1-2 [doi]
• Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF ApplicationsAshwin Tunga, Xiuling Li, Shaloo Rakheja. 1-2 [doi]
• Performance Estimation of GaN CMOS TechnologyNadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios. 1-2 [doi]
• Mobility Boost in Transparent Oxide Semiconductors with High-κ Gated TFTsNeel Chatterjee, Yuhang Sun, Sarah L. Swisher. 1-2 [doi]
• MoS2/graphene Lateral Heterostructure Field Effect TransistorsDaniel S. Schneider, Eros Reato, Leonardo Lucchesi, Zhenyu Wang, Agata Piacetini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max C. Lemme. 1-2 [doi]
• Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal managementSrabanti Chowdhury. 1 [doi]
• Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory ApplicationsS. Ohmi, H. Morita, M. Hayashi, A. Ihara, J. Y. Pyo. 1-2 [doi]
• Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar DevicesElisabetta Corti, Corentin Delacour, Aida Todri-Sanial, Siegfried F. Karg. 1-2 [doi]
• Exchange-Coupling-Enabled Electrical-Isolation of Compute and Programming Paths in Valley-Spin Hall Effect based Spintronic Device for Neuromorphic ApplicationsK. Cho, Xuanyao Fong, Sumeet Kumar Gupta. 1-2 [doi]
• Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown VoltageXinyi Xia, Minghan Xian, Patrick Carey, Chaker Fares, Fan Ren, Marko Tadjer, Steve J. Pearton, Thieu Quang Tu, Ken Goto, Akito Kuramata. 1-2 [doi]
• Reduced Switching Current Density and Improved Interface Quality using Oxynitride Tunnel Barrier in Magnetic Tunnel Junctions for MRAM ApplicationMohamad G. Moinuddin, Srikant Srinivasan, Satinder K. Sharma. 1-2 [doi]
• Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealingA. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak. 1-2 [doi]
• CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM ApplicationsXi Zhou, Liang Zhao, Linfeng Lu, Dongdong Li. 1-2 [doi]
• Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layerAtsushi Shimbori, Alex Q. Huang. 1-2 [doi]
• Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance StateHaibo Gong, Rubab Ume, Vadim Tokranov, Michael Yakimov, Devendra Sadana, Kevin Brew, Guy Cohen, Sandra Schujman, Karsten Beckmann, Nathaniel C. Cady, Serge Oktyabrsky. 1-2 [doi]
• Impact of Bottom Electrode Roughness on the Analog Switching Characteristics in Nanoscale RRAM ArrayWenbin Zhang, Jianshi Tang, Bin Gao 0006, Wen Sun, Wei Liu, Kanwen Wang, Wei Wu, He Qian, Huaqiang Wu. 1-2 [doi]
• Self-Rectified Memristor with Bimodal Functionality and Forming Polarity Responses in Crossbar Array ApplicationsYing-Chen Daphne Chen, Sumant Sarkar, John Gibbs. 1-2 [doi]
• Fast terahertz detection by asymmetric dual-grating-gate graphene FETKoichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Yuma Takida, HIroaki Minamide, Taiichi Otsuji. 1-2 [doi]
• Optimizing Monolithic and Heterogeneous Integration to Create Intelligent-Grand-Scale-Integration for Smart MicroSystemsNicky Lu. 1-2 [doi]
• Artificial Optic-neural Synapse Based on Floating-gate Phototransistor for Machine VisionJun Tao, Juan Sanchez Vazquez, Rehan Kapadia. 1-2 [doi]
• On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operationDennis Lin, X. Wu, V. Mootheri, D. Cott, Benjamin Groven, P. Morin, Inge Asselberghs, Iuliana Radu. 1-2 [doi]
• MOS technology for quantum computing: recent progress and perspectives for scaling upLouis Hutin, B. Bertrand, H. Niebojewski, P.-A. Mortemousque, Mikaël Casse, Gérard Billiot, Xavier Jehl, Romain Maurand, Matias Urdampilleta, Yann-Michel Niquet, S. De Franceschi, T. Meunier, Maud Vinet. 1-2 [doi]
• Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHzBrian Markman, Simone Tommaso Suran Brunelli, Matthew Guidry, Logan Whitaker, Mark J. W. Rodwell. 1-2 [doi]
• Single-Pole-Double-Throw RF switches based on monolayer MoS2Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande. 1-2 [doi]
• MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate InsulatorJ. W. Shin, M. Tanuma, S. Ohmi. 1-2 [doi]
• Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well InsertedChih-Yao Chang, Kuan-Ju Wu, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang. 1-2 [doi]
• Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductorJie Zhang, Lincheng Wei, Meng Jia, Peng Cui, Yuping Zeng. 1-2 [doi]
• Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown FieldsDolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Erhard Kohn, Zlatko Sitar, Ramon Collazo, Spyridon Pavlidis. 1-2 [doi]
• 6) Low Voltage ITO/HfO2 RRAMs for Future 3D IntegrationMamidala Saketh Ram, Karl-Magnus Persson, Lars-Erik Wernersson. 1-2 [doi]
• Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnetsAnkit Shukla, Shaloo Rakheja. 1-2 [doi]
• Waveguide-Integrated Photodetectors based on 2D Platinum DiselenideShayan Parhizkar, Maximilian Prechtl, Anna Lena Giesecke, Stephan Suckow, Sebastian Lukas, Oliver Hartwig, Arne Quellmalz, Kristinn B. Gylfason, Daniel Schall 0003, Georg S. Duesberg, Max C. Lemme. 1-2 [doi]
• GaN-channel HEMTs with AlN buffer for high-voltage switchingOliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl. 1-2 [doi]
• Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHzJoshua A. Perozek, Ahmad Zubair, Tomás Palacios. 1-2 [doi]
• Field-Emission Enhanced Contacts for Disordered Semiconductor based Thin-Film TransistorsKelly Liang, Xiao Wang, Yuchen Zhou, Xin Xu, Calla McCulley, Liang Wang, Jaydeep Kulkarni, Ananth Dodabalapur. 1-2 [doi]
• Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHzAustin Hickman, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li 0023, James C. M. Hwang, Huili Grace Xing, Debdeep Jena. 1-2 [doi]