On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation

Dennis Lin, X. Wu, V. Mootheri, D. Cott, Benjamin Groven, P. Morin, Inge Asselberghs, Iuliana Radu. On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. In Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. pages 1-2, IEEE, 2021. [doi]

Abstract

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