A. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak. Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing. In Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. pages 1-2, IEEE, 2021. [doi]
Abstract is missing.