Agata Piacentini, Daniel Schneider, Martin Otto 0003, Bárbara Canto, Zhenyu Wang, Aleksandra Radenovic, Andras Kis, Max C. Lemme, Daniel Neumaier. Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. In Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. pages 1-2, IEEE, 2021. [doi]
Abstract is missing.