Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Wolfgang Gös, Yannick Wimmer, A.-M. El-Sayed, G. Rzepa, Markus Jech, A. L. Shluger, Tibor Grasser. Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectronics Reliability, 87:286-320, 2018. [doi]

@article{GosWERJSG18,
  title = {Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence},
  author = {Wolfgang Gös and Yannick Wimmer and A.-M. El-Sayed and G. Rzepa and Markus Jech and A. L. Shluger and Tibor Grasser},
  year = {2018},
  doi = {10.1016/j.microrel.2017.12.021},
  url = {https://doi.org/10.1016/j.microrel.2017.12.021},
  researchr = {https://researchr.org/publication/GosWERJSG18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {87},
  pages = {286-320},
}