Thomas Grap, F. Riederer, C. Gupta, Joachim Knoch. Buried multi-gate InAs-nanowire FETs. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 82-85, IEEE, 2017. [doi]
@inproceedings{GrapRGK17,
title = {Buried multi-gate InAs-nanowire FETs},
author = {Thomas Grap and F. Riederer and C. Gupta and Joachim Knoch},
year = {2017},
doi = {10.1109/ESSDERC.2017.8066597},
url = {https://doi.org/10.1109/ESSDERC.2017.8066597},
researchr = {https://researchr.org/publication/GrapRGK17},
cites = {0},
citedby = {0},
pages = {82-85},
booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
publisher = {IEEE},
isbn = {978-1-5090-5978-2},
}