25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS

Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer. 25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 424-425, IEEE, 2016. [doi]

Abstract

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