Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift - researchr publication authors

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Jie Gu, Sachin S. Sapatnekar, Chris H. Kim. Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift. In Proceedings of the 44th Design Automation Conference, DAC 2007, San Diego, CA, USA, June 4-8, 2007. pages 87-92, IEEE, 2007. [doi]

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