Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

K. Guetarni, Antoine D. Touboul, J. Boch, L. Foro, A. Privat, A. Michez, J.-R. Vaillé, Frédéric Saigné. Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. Microelectronics Reliability, 53(9-11):1293-1299, 2013. [doi]

Abstract

Abstract is missing.