39 000-Subexposures/s Dual-ADC CMOS Image Sensor With Dual-Tap Coded-Exposure Pixels for Single-Shot HDR and 3-D Computational Imaging

Rahul Gulve, Navid Sarhangnejad, Gairik Dutta, Motasem Sakr, Don Nguyen, Roberto Rangel, Wenzheng Chen, Zhengfan Xia, Mian Wei, Nikita Gusev, Esther Y. H. Lin, Xiaonong Sun, Leo Hanxu, Nikola Katic, Ameer M. S. Abdelhadi, Andreas Moshovos, Kiriakos N. Kutulakos, Roman Genov. 39 000-Subexposures/s Dual-ADC CMOS Image Sensor With Dual-Tap Coded-Exposure Pixels for Single-Shot HDR and 3-D Computational Imaging. J. Solid-State Circuits, 58(11):3150-3163, November 2023. [doi]

@article{GulveSDSNRCXWGLSHKAMKG23,
  title = {39 000-Subexposures/s Dual-ADC CMOS Image Sensor With Dual-Tap Coded-Exposure Pixels for Single-Shot HDR and 3-D Computational Imaging},
  author = {Rahul Gulve and Navid Sarhangnejad and Gairik Dutta and Motasem Sakr and Don Nguyen and Roberto Rangel and Wenzheng Chen and Zhengfan Xia and Mian Wei and Nikita Gusev and Esther Y. H. Lin and Xiaonong Sun and Leo Hanxu and Nikola Katic and Ameer M. S. Abdelhadi and Andreas Moshovos and Kiriakos N. Kutulakos and Roman Genov},
  year = {2023},
  month = {November},
  doi = {10.1109/JSSC.2023.3275271},
  url = {https://doi.org/10.1109/JSSC.2023.3275271},
  researchr = {https://researchr.org/publication/GulveSDSNRCXWGLSHKAMKG23},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {58},
  number = {11},
  pages = {3150-3163},
}