Jingrui Guo, Ying Sun, Lingfei Wang, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu. Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 300-301, IEEE, 2022. [doi]
@inproceedings{GuoSWDHWFCHXGJY22,
title = {Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability},
author = {Jingrui Guo and Ying Sun and Lingfei Wang and Xinlv Duan and Kailiang Huang and Zhaogui Wang and Junxiao Feng and Qian Chen and Shijie Huang and Lihua Xu and Di Geng and Guangfan Jiao and Shihui Yin and Zhengbo Wang and Weiliang Jing and Ling Li and Ming Liu},
year = {2022},
doi = {10.1109/VLSITechnologyandCir46769.2022.9830482},
url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830482},
researchr = {https://researchr.org/publication/GuoSWDHWFCHXGJY22},
cites = {0},
citedby = {0},
pages = {300-301},
booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9772-5},
}