Haijun Guo, Chunwei Zhang, Hao Kan, Chao Cao. AlGaN/GaN HEMTs with electric field modulation effect: a comprehensive study. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{GuoZKC21, title = {AlGaN/GaN HEMTs with electric field modulation effect: a comprehensive study}, author = {Haijun Guo and Chunwei Zhang and Hao Kan and Chao Cao}, year = {2021}, doi = {10.1109/ASICON52560.2021.9620499}, url = {https://doi.org/10.1109/ASICON52560.2021.9620499}, researchr = {https://researchr.org/publication/GuoZKC21}, cites = {0}, citedby = {0}, pages = {1-4}, booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021}, editor = {Fan Ye and Ting-Ao Tang}, publisher = {IEEE}, isbn = {978-1-6654-3867-4}, }