AlGaN/GaN HEMTs with electric field modulation effect: a comprehensive study

Haijun Guo, Chunwei Zhang, Hao Kan, Chao Cao. AlGaN/GaN HEMTs with electric field modulation effect: a comprehensive study. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

Abstract is missing.