Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

Jing Guo, Lei Zhu, Wenyi Liu, Hai Huang, Shanshan Liu, Tianqi Wang, Liyi Xiao, Zhigang Mao. Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology. IEEE Trans. VLSI Syst., 25(5):1593-1600, 2017. [doi]

@article{GuoZLHLWXM17,
  title = {Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology},
  author = {Jing Guo and Lei Zhu and Wenyi Liu and Hai Huang and Shanshan Liu and Tianqi Wang and Liyi Xiao and Zhigang Mao},
  year = {2017},
  doi = {10.1109/TVLSI.2016.2645282},
  url = {http://doi.ieeecomputersociety.org/10.1109/TVLSI.2016.2645282},
  researchr = {https://researchr.org/publication/GuoZLHLWXM17},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. VLSI Syst.},
  volume = {25},
  number = {5},
  pages = {1593-1600},
}