Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects

Anshul Gupta, Shreya Kundu, Stefan Decoster, K. Sah, G. Delie, B. Truijen, Davide Tierno, Giulio Marti, O. Varela Pedreira, B. Kenens, Y. Hermans, C. Adelmann, B. de Wachter, Ivan Ciofi, G. Murdoch, A. Cross, Seongho Park, Zsolt Tokei. Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects. In IEEE Symposium on VLSI Technology and Circuits 2024, Honolulu, HI, USA, June 16-20, 2024. pages 1-2, IEEE, 2024. [doi]

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