Low Leakage Noise Tolerant 10T SRAM Cell - researchr publication authors

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Vinay Gupta, Pratiksha Shukla, Manisha Pattanaik. Low Leakage Noise Tolerant 10T SRAM Cell. In S. Rajaram, N. B. Balamurugan, D. Gracia Nirmala Rani, Virendra Singh, editors, VLSI Design and Test - 22nd International Symposium, VDAT 2018, Madurai, India, June 28-30, 2018, Revised Selected Papers. Volume 892 of Communications in Computer and Information Science, pages 538-550, Springer, 2018. [doi]

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