S. Haas, D. Reuter, Andreas Bertz, Thomas Gessner, M. Schramm, K.-U. Loebel, J. T. Horstmann. Direct integration of field effect transistors as electro mechanical transducer for stress. In Seventh International Conference on Sensing Technology, ICST 2013, Wellington, New Zealand, December 3-5, 2013. pages 379-382, IEEE, 2013. [doi]
@inproceedings{HaasRBGSLH13,
title = {Direct integration of field effect transistors as electro mechanical transducer for stress},
author = {S. Haas and D. Reuter and Andreas Bertz and Thomas Gessner and M. Schramm and K.-U. Loebel and J. T. Horstmann},
year = {2013},
doi = {10.1109/ICSensT.2013.6727679},
url = {https://doi.org/10.1109/ICSensT.2013.6727679},
researchr = {https://researchr.org/publication/HaasRBGSLH13},
cites = {0},
citedby = {0},
pages = {379-382},
booktitle = {Seventh International Conference on Sensing Technology, ICST 2013, Wellington, New Zealand, December 3-5, 2013},
publisher = {IEEE},
}