Daniel B. Habersat, Ronald Green, Aivars J. Lelis. Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{HabersatGL19,
title = {Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs},
author = {Daniel B. Habersat and Ronald Green and Aivars J. Lelis},
year = {2019},
doi = {10.1109/IRPS.2019.8720538},
url = {https://doi.org/10.1109/IRPS.2019.8720538},
researchr = {https://researchr.org/publication/HabersatGL19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
publisher = {IEEE},
isbn = {978-1-5386-9504-3},
}