Oxide-based RRAM models for circuit designers: A comparative analysis

Basma Hajri, Mohammad M. Mansour, Ali Chehab, Hassen Aziza. Oxide-based RRAM models for circuit designers: A comparative analysis. In 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, DTIS 2017, Palma de Mallorca, Spain, April 4-6, 2017. pages 1-6, IEEE, 2017. [doi]

@inproceedings{HajriMCA17,
  title = {Oxide-based RRAM models for circuit designers: A comparative analysis},
  author = {Basma Hajri and Mohammad M. Mansour and Ali Chehab and Hassen Aziza},
  year = {2017},
  doi = {10.1109/DTIS.2017.7930176},
  url = {https://doi.org/10.1109/DTIS.2017.7930176},
  researchr = {https://researchr.org/publication/HajriMCA17},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, DTIS 2017, Palma de Mallorca, Spain, April 4-6, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-6377-2},
}