Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle. Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. In Andrzej Napieralksi, editor, 27th International Conference on Mixed Design of Integrated Circuits and System, MIXDES 2020, Wroclaw, Poland, June 25-27, 2020. pages 181-184, IEEE, 2020. [doi]
Abstract is missing.