Ali Hamieh, Jihad Hamieh, Ali Hamie, Ali Ghorayeb, Abdallah Zaiour, Bassam Assaf. Effect of oxygen pressure on the semiconductor properties of FTO thin films. In 29th International Conference on Microelectronics, ICM 2017, Beirut, Lebanon, December 10-13, 2017. pages 1-4, IEEE, 2017. [doi]
@inproceedings{HamiehHHGZA17,
title = {Effect of oxygen pressure on the semiconductor properties of FTO thin films},
author = {Ali Hamieh and Jihad Hamieh and Ali Hamie and Ali Ghorayeb and Abdallah Zaiour and Bassam Assaf},
year = {2017},
doi = {10.1109/ICM.2017.8268835},
url = {https://doi.org/10.1109/ICM.2017.8268835},
researchr = {https://researchr.org/publication/HamiehHHGZA17},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {29th International Conference on Microelectronics, ICM 2017, Beirut, Lebanon, December 10-13, 2017},
publisher = {IEEE},
isbn = {978-1-5386-4049-4},
}