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Effect of oxygen pressure on the semiconductor properties of FTO thin films

Ali Hamieh, Jihad Hamieh, Ali Hamie, Ali Ghorayeb, Abdallah Zaiour, Bassam Assaf. Effect of oxygen pressure on the semiconductor properties of FTO thin films. In 29th International Conference on Microelectronics, ICM 2017, Beirut, Lebanon, December 10-13, 2017. pages 1-4, IEEE, 2017. [doi]

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