13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology

Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang. 13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 230-231, IEEE, 2014. [doi]

@inproceedings{HamzaogluABGLLM14,
  title = {13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology},
  author = {Fatih Hamzaoglu and Umut Arslan and Nabhendra Bisnik and Swaroop Ghosh and Manoj B. Lal and Nick Lindert and Mesut Meterelliyoz and Randy B. Osborne and Joodong Park and Shigeki Tomishima and Yih Wang and Kevin Zhang},
  year = {2014},
  doi = {10.1109/ISSCC.2014.6757412},
  url = {https://doi.org/10.1109/ISSCC.2014.6757412},
  researchr = {https://researchr.org/publication/HamzaogluABGLLM14},
  cites = {0},
  citedby = {0},
  pages = {230-231},
  booktitle = {2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-0918-6},
}