13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology

Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang. 13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 230-231, IEEE, 2014. [doi]

Abstract

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