Multiple-Valued Content-Addressable Memory Using Metal-Ferroelectric-Semiconductor FETs

Takahiro Hanyu, Hiromitsu Kimura, Michitaka Kameyama. Multiple-Valued Content-Addressable Memory Using Metal-Ferroelectric-Semiconductor FETs. In ISMVL. pages 30-35, 1999. [doi]

Abstract

Abstract is missing.