Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata. 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p:::+:::-GaAs Gate Hetero-Junction FET. IEICE Transactions, 91-C(7):1104-1108, 2008. [doi]
@article{HarimaBTI08,
title = {1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p:::+:::-GaAs Gate Hetero-Junction FET},
author = {Fumio Harima and Yasunori Bito and Hidemasa Takahashi and Naotaka Iwata},
year = {2008},
doi = {10.1093/ietele/e91-c.7.1104},
url = {http://dx.doi.org/10.1093/ietele/e91-c.7.1104},
researchr = {https://researchr.org/publication/HarimaBTI08},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {91-C},
number = {7},
pages = {1104-1108},
}