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Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata. 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p:::+:::-GaAs Gate Hetero-Junction FET. IEICE Transactions, 91-C(7):1104-1108, 2008. [doi]
Abstract is missing.